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Strange Material Gets Better at Conducting Electricity The Thinner It Gets : ScienceAlert (opens in a new tab)

sciencealert.com · 2026-09-13

Short answerEvidenceSource

Short answer

Mixed

Mixed.

The claims we could check match the study, but some claims were not covered by the evidence reviewed.

  • 3 supported
  • 4 not covered

Checked against the study summary. The full text wasn't available, so some details couldn't be settled either way.

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Follow the evidence trail
1
2

NewsLink checks it

Mixed

Every claim we could check holds up. Three of seven claims match the study. This overall rating is based only on the claims we could check. Four claims the study doesn't address.

  • 3 supported
  • 4 not covered
Open claim evidence
3
Then inspect each claim

Evidence layer

Claim by claim

Each claim gets a verdict. Expand it to see the evidence directly below.

7 claims in this story

Showing all 7 claimsChoose a verdict to focus the list.

Claim 1 of 7Not coveredA 20-nm-thick CoSi nanoflake is reported to be ten times less resistive than a copper interconnect of equal thickness at room temperature and to have about 100 times greater current-carrying capacity.View evidenceHide evidence

As stated10 times less resistive; 100 times greater current-carrying capacity

Why this verdict

The 20-nm CoSi resistivity comparison is supported: the abstract states it is about one-tenth that of copper at the same thickness. However, the stated approximately 100-fold greater current-carrying capacity versus copper is not present in the abstract-level profile. The profile reports reliability up to 1×10^8 A cm^-2, but not a 100× copper comparison.

1

Study evidence

Resistivity of CoSi decreases as thickness is reduced from 1 µm to ≈20 nm.7.0 μΩ·cm → 0.72 μΩ·cm (1 µm to ≈20 nm)

“As the CoSi thickness decreases from 1 µm to ∼20 nm, its resistivity decreases from 7.0 to 0.72 μΩ·cm due to the highly conductive surface path.”
2

Study evidence

CoSi shows excellent electromigration and thermal reliability, operating reliably at current densities up to 1×10^8 A cm^-2 and temperatures up to 450 °C.operation up to 1×10^8 A cm^-2; temperatures up to 450 °C

“The high cohesive energy (5.4 eV) and migration barrier (3.7 eV) of CoSi confer excellent reliability at current densities of up to 108 A cm-2 and temperatures up to 450 °C.”
Claim 2 of 7Not coveredRadio-frequency testing indicated CoSi interconnects can transmit signals with little loss up to 40 GHz.View evidenceHide evidence

As statedup to 40 GHz

Why this verdict

The abstract-level profile supports operation up to 40 GHz based on radiofrequency measurements. It does not provide quantitative RF loss metrics such as insertion loss, return loss, or S-parameters, so the stronger claim of transmitting signals with 'little loss' cannot be verified at abstract depth.

1

Study evidence

Radiofrequency measurements reported in the abstract show CoSi interconnects operating at frequencies up to 40 GHz.operation up to 40 GHz

“Radiofrequency measurements demonstrate CoSi interconnect operation at frequencies up to 40 GHz.”
Claim 3 of 7Not coveredIn a silicon ring oscillator, replacing part of the traditional metal interconnect with a CoSi nanoflake produced a negligible change in total wire resistance and allowed the oscillator to run at the same frequency.View evidenceHide evidence

As statednegligible change in total resistance

Why this verdict

The paper profile supports the ring-oscillator frequency result: a 16-nm-node ring oscillator with a CoSi interconnect operated at the same frequency as a metal-interconnected counterpart. The added details that only part of the traditional metal interconnect was replaced, that the material was specifically a nanoflake in this circuit context, and that total wire resistance changed negligibly are not available in the abstract-level profile.

1

Study evidence

Integration of a CoSi interconnect with a 16‑nm‑node silicon ring oscillator resulted in an oscillator that operates at the same frequency as a metal‑interconnected counterpart (abstract).no difference (same operating frequency as metal control)

“We further integrate a CoSi interconnect with a 16-nm-node silicon ring oscillator, which operates at the same frequency as its metal-interconnected counterpart.”
Claim 4 of 7Not coveredThe article says CoSi remained stable at high current densities and withstood 450 degrees Celsius for 200 hours.View evidenceHide evidence

As stated450 degrees Celsius for 200 hours

Why this verdict

The abstract-level profile supports high-current-density and high-temperature reliability, including operation up to 1×10^8 A cm^-2 and temperatures up to 450 °C. It does not state a 200-hour duration or provide detailed stability/failure criteria, so that part of the claim is not verifiable at abstract depth.

1

Study evidence

CoSi shows excellent electromigration and thermal reliability, operating reliably at current densities up to 1×10^8 A cm^-2 and temperatures up to 450 °C.operation up to 1×10^8 A cm^-2; temperatures up to 450 °C

“The high cohesive energy (5.4 eV) and migration barrier (3.7 eV) of CoSi confer excellent reliability at current densities of up to 108 A cm-2 and temperatures up to 450 °C.”
Claim 5 of 7SupportedCopper interconnects are becoming less adequate as chip components shrink because surface scattering increases resistance and signal delay.View evidenceHide evidence

Why this verdict

The paper profile says copper interconnects face increased carrier scattering and resistance as dimensions shrink, motivating alternative conductors. The specific phrase about signal delay is less directly detailed in the abstract-level profile, but the overall scaling problem for copper interconnects is reflected.

1

Study evidence

Resistivity of CoSi decreases as thickness is reduced from 1 µm to ≈20 nm.7.0 μΩ·cm → 0.72 μΩ·cm (1 µm to ≈20 nm)

“As the CoSi thickness decreases from 1 µm to ∼20 nm, its resistivity decreases from 7.0 to 0.72 μΩ·cm due to the highly conductive surface path.”
Claim 6 of 7SupportedResearchers demonstrated that nanoscale cobalt silicide (CoSi) becomes more conductive as it gets thinner, with resistivity dropping by an order of magnitude from about 1 micrometer to around 20 nanometers.View evidenceHide evidence

As statedorder of magnitude

Why this verdict

The abstract-level profile directly reports that CoSi resistivity decreases from 7.0 to 0.72 μΩ·cm as thickness decreases from 1 μm to about 20 nm, approximately an order-of-magnitude drop, and attributes this to a highly conductive surface path.

1

Study evidence

Resistivity of CoSi decreases as thickness is reduced from 1 µm to ≈20 nm.7.0 μΩ·cm → 0.72 μΩ·cm (1 µm to ≈20 nm)

“As the CoSi thickness decreases from 1 µm to ∼20 nm, its resistivity decreases from 7.0 to 0.72 μΩ·cm due to the highly conductive surface path.”
Claim 7 of 7SupportedThe researchers conclude that CoSi is a promising, and possibly superior, alternative to copper interconnects at the nanoscale.View evidenceHide evidence

Why this verdict

The abstract-level profile presents CoSi as a highly scalable interconnect conductor that outperforms copper at comparable nanoscale thickness and also shows reliability, RF operation, and ring-oscillator integration. Framing it as a promising and possibly superior nanoscale alternative to copper is consistent with the paper's abstract-level conclusions, provided it is not taken as proof of commercial readiness.

1

Study evidence

Resistivity of CoSi decreases as thickness is reduced from 1 µm to ≈20 nm.7.0 μΩ·cm → 0.72 μΩ·cm (1 µm to ≈20 nm)

“As the CoSi thickness decreases from 1 µm to ∼20 nm, its resistivity decreases from 7.0 to 0.72 μΩ·cm due to the highly conductive surface path.”
2

Study evidence

CoSi shows excellent electromigration and thermal reliability, operating reliably at current densities up to 1×10^8 A cm^-2 and temperatures up to 450 °C.operation up to 1×10^8 A cm^-2; temperatures up to 450 °C

“The high cohesive energy (5.4 eV) and migration barrier (3.7 eV) of CoSi confer excellent reliability at current densities of up to 108 A cm-2 and temperatures up to 450 °C.”
Then look for missing context

Context layer

What the story left out

Important study details the story did not include.

  • The paper attributes the unusual decreasing-resistivity scaling to a highly conductive surface path.

    The story says CoSi becomes more conductive as it gets thinner, but the supplied claims do not clearly mention the paper's stated surface-path mechanism.

    From other

  • The paper cites high cohesive energy and migration barrier as the materials-level rationale for electromigration/thermal reliability.

    The story reports stability/reliability but does not mention the cohesive-energy or migration-barrier explanation.

    From Electromigration and thermal stress testing; materials energetics estimation

7 things the story did carry across
  • Copper interconnects face worsening scattering/resistance as dimensions shrink, motivating alternative nanoscale conductors.
  • CoSi resistivity decreases as thickness is reduced from 1 μm to about 20 nm, from 7.0 to 0.72 μΩ·cm.
  • At 20 nm thickness, CoSi is reported to have about one-tenth the room-temperature resistivity of copper at the same thickness.
  • CoSi reliability is reported at very high current density and elevated temperature, up to 1×10^8 A cm^-2 and 450 °C.
  • Radiofrequency measurements demonstrate CoSi interconnect operation up to about 40 GHz.
  • A CoSi interconnect was integrated into a 16-nm-node silicon ring oscillator, which operated at the same frequency as a metal-interconnected control.
  • The paper profile supports CoSi as a promising nanoscale interconnect candidate, not an established commercial replacement already validated in large-scale manufacturing.
Then read the study layer

Study layer

Study at a glance

Scan the study first. Expand only the parts you want to inspect.

Pieces of work

4

Evidence read

study summary

Lead result

other

1Lead resultotherCoSi semimetal thin films/lines can serve as highly scalable interconnect conductors with decreasing resistivity at nanoscale thickness due to a highly conductive surface path, outperforming Cu at comparable thickness.Expand

In plain English

The paper reports that CoSi thin films/lines show decreasing room-temperature resistivity as thickness is reduced from 1 µm to ≈20 nm (7.0 → 0.72 μΩ·cm). The authors attribute this scaling to a highly conductive surface path and state that 20-nm-thick CoSi has a room-temperature resistivity about one-tenth that of copper at the same thickness, supporting CoSi as a candidate nanoscale interconnect conductor.

Key findings

  • Resistivity of CoSi decreases as thickness is reduced from 1 µm to ≈20 nm.7.0 μΩ·cm → 0.72 μΩ·cm (1 µm to ≈20 nm)
  • 20-nm-thick CoSi has substantially lower resistivity than copper at the same thickness.Reported as ≈0.1× the resistivity of copper at matched thickness
“As the CoSi thickness decreases from 1 µm to ∼20 nm, its resistivity decreases from 7.0 to 0.72 μΩ·cm due to the highly conductive surface path.”
What this piece can’t prove

3 further details could not be confirmed from the summary.

2otherCoSi exhibits strong electromigration/thermal reliability at very high current density and elevated temperature due to high cohesive energy and migration barrier.Electromigration and thermal stress testing; materials energetics estimationExpand

In plain English

The abstract reports that single-crystalline CoSi demonstrates excellent electromigration and thermal reliability, with reliable operation at current densities up to 1×10^8 A cm^-2 and temperatures up to 450 °C. The authors ascribe this robustness to high materials energetics, specifically a reported cohesive energy of 5.4 eV and a migration barrier of 3.7 eV.

Key findings

  • CoSi shows excellent electromigration and thermal reliability, operating reliably at current densities up to 1×10^8 A cm^-2 and temperatures up to 450 °C.operation up to 1×10^8 A cm^-2; temperatures up to 450 °C
  • High cohesive energy (5.4 eV) and high migration barrier (3.7 eV) are cited as the material-level explanation for the observed reliability.
“The high cohesive energy (5.4 eV) and migration barrier (3.7 eV) of CoSi confer excellent reliability at current densities of up to 108 A cm-2 and temperatures up to 450 °C.”
What this piece can’t prove
  • It is not specified whether the cohesive energy and migration barrier values were obtained experimentally or via calculation, nor are methodological details given for those measurements/calculations.

1 further detail could not be confirmed from the summary.

3otherCoSi interconnects can operate at high radiofrequency (up to ~40 GHz) and can be integrated in a 16-nm-node ring oscillator without degrading operating frequency versus metal-interconnected control.RF electrical measurementsExpand

In plain English

The abstract reports radiofrequency measurements showing that CoSi interconnects operate at frequencies up to 40 GHz.

Key findings

  • Radiofrequency measurements reported in the abstract show CoSi interconnects operating at frequencies up to 40 GHz.operation up to 40 GHz
“Radiofrequency measurements demonstrate CoSi interconnect operation at frequencies up to 40 GHz.”
What this piece can’t prove

3 further details could not be confirmed from the summary.

4otherCoSi interconnects can operate at high radiofrequency (up to ~40 GHz) and can be integrated in a 16-nm-node ring oscillator without degrading operating frequency versus metal-interconnected control.ring-oscillator integration (16-nm node)Expand

In plain English

The authors report integration of a CoSi interconnect into a 16‑nm-node silicon ring oscillator; the CoSi‑interconnected oscillator operated at the same frequency as a metal‑interconnected control, as stated in the abstract.

Key findings

  • Integration of a CoSi interconnect with a 16‑nm‑node silicon ring oscillator resulted in an oscillator that operates at the same frequency as a metal‑interconnected counterpart (abstract).no difference (same operating frequency as metal control)
“We further integrate a CoSi interconnect with a 16-nm-node silicon ring oscillator, which operates at the same frequency as its metal-interconnected counterpart.”
What this piece can’t prove
  • Summary is based solely on the abstract; the full paper is needed for experimental details and supporting data.
  • Abstract states equivalence of frequency but does not provide the absolute oscillator frequency or numerical comparison data.
  • Abstract does not report measurement conditions (supply voltage, temperature), sample size, or statistical variability.

1 further detail could not be confirmed from the summary.

Finally, the search trail

Method layer

NewsLink found the paper. Tessa takes you deeper.

NewsLink checks the story. Tessa is where you inspect the paper, authors, evidence, and research context.

Papers considered

The selected paper, plus nearby candidates.

PubMed, Europe PMC, Crossref · 15 candidate papers

Candidate

ChemInform Abstract: DYSPROSIUM COBALT SILICIDE (DY2CO3SI5), LUTETIUM COBALT SILICIDE (LU2CO3SI5), YTTRIUM COBALT SILICIDE (Y2CO3SI5) AND SCANDIUM COBALT SILICIDE (SC2CO3SI5) WITH A MONOCLINIC STRUCTURAL DEFORMATION VARIANT OF THE ORTHORHOMBIC URANIUM COBALT SILICIDE (U2CO3SI5) STRUCTURE TYPE

Chemischer Informationsdienst · 1985 · Crossref

Source (opens in a new tab)

And 9 more candidates considered.